The processes involve the initial formation nanostructured support elements during a first annealing step.
所述工艺涉及第一退火步骤期间纳米结构化支承元件的初始形成。
The second step is the image segmentation algorithm, whose key is the improved multiple-value simulated annealing technique.
第二步是基于模型参数的图象分割算法，其核心是一个改进的多值模拟退火技术。
The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
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