MOSFET and Power Drivers 金属氧化物场效应与功率驱动
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
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