The element employs a bifilar wound wire grid on an insulating substrate.
元件系用双股绕线网缠绕在一块绝缘基板上。
The element employs a bifilar wound wire grid on an insulating substrate .
元件系用双股绕线网缠绕在一块绝缘基板上。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
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