The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.
本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。
Recently, the anisotropic magnetoresistive (AMR) sensor is one of the most important magnetic field sensors in the field.
各向异性磁电阻(amr)传感器是近年来磁敏传感器的研究重点之一。
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