The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

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This instrument is based on definite weight, independent of fuel density, viscosity, impurities and ambient temperature.

本仪器采用定重量法，不受燃油密度、粘度、杂质含量、环境温度等影响。

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Hard and wear-resistant titanium nitride coatings were deposited by pulsed high energy density plasma technique on silicon nitride ceramic cutting tools at ambient temperature.

用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。

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