(FBH)、柏林技术大学、LayTec ag和UVphototonics nt gmbh。基于铝氮化镓(Algan)材料体系的紫外和紫外光谱制备高功率led技术，设计了led和led发光二极管，并将其设计为2020。
基于4个网页-相关网页
Yann Algan 阿尔甘
AlGaN films AlGaN薄膜
P-AlGaN P型AlGaN
cubic AlGaN 立方相AlGaN
AlGaN detector AlGaN探测器
AlGaN FPA detector AlGaN焦平面探测器
AlGaN Schottky diode AlGaN肖特基二极管
AlGaN UV focal plane AlGaN紫外焦平面
traps in AlGaN barrier 势垒层陷阱
But in the high-quality AlGaN/GaN heterostructure, there will be two dimensional electron gas (2DEG) system with high electronic density on the surface of heterostructure, even though all layers were undoped artificially.
但在高质量的铝镓氮/氮化镓异质结中,即使所有的层均不人为掺杂,仍可以在异质界面上形成高的面电子密度的二维电子气体系。
参考来源 - AlGaN/GaN基HEMT材料性能与测试技术的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
"This is legitimate," Algan says.
“这是合情合理的，”沃甘说。
But Algan notes that even the best deal can quickly evaporate if the car dealership doesn't have some way of making money.
不过请记住，沃甘曾经说过，即使是最好的经销商，在发现从你那里赚不到钱的时候，他们也会很快人间蒸发。
The energy band tailoring in AlGaN/GaN heterostructure by using polarization charge is investigated according to the self consistent solution of Schr dinger equation and Poisson equation.
从自洽求解薛定谔方程和泊松方程出发研究了利用异质界面上的极化电荷来剪裁异质结能带。
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