al gate al栅
al-gate cmos 铝栅cmos
al-gate cmos process 铝栅cmos工艺
al-gate bulk si cmos ic 铝栅体硅cmos电路
al gate p-well cmos process 铝栅p阱cmos工艺
al o gate dielectric al2o3门电介质
Al 2O 3 gate dielectric Al2O3栅介质
Based on 3.0um Al-gate process and studied the characteristics of the process, adopt Silicon Local Oxidation and P-N junction technology to realize device isolation. We developed a new technology: 2.0um Al-gate process, conquered roughness issue which caused by metal etch.
在深入研究了铝栅工艺特性的基础上,采用硅的局部氧化工艺与P-N结隔离工艺相结合的技术,成功地开发出2.0um超小型铝栅工艺,克服了3.0um工艺中栅控电压能力弱、金属刻蚀工艺复杂等技术难题,减小了漏电的风险并获得了很高的良品率。
参考来源 - 铝栅工艺特征尺寸小型化的研究与应用·2,447,543篇论文数据，部分数据来源于NoteExpress
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
More fighters showed up, and some onlookers, too, until there were perhaps forty vehicles pulled up in front of the gate—the entirety of the force defending Al Uqaylah.
更多的援军抵达，也有更多的旁观者，直到大约40来辆机动车停在了牌坊前——这是防守阿克亚拉的全部兵力了。
The design principle of the gate equivalent Al is proposed and the way to solve the turning off edge effect is given.
给出了门极等位铝条的设计原则；提出了解决MCT关断时边缘效应的方法。
应用推荐