Though nitrogen has been believed to be most promising acceptor to dope p-type ZnO, low solubility in ZnO and deep impurity level cause significant resistance to the formation of shallow acceptor level and high acceptor concentration.
但是,N在ZnO中的固溶度比较低,而且形成的受主能级也比较深,因此难以实现有效的掺杂。
参考来源 - 溶胶凝胶法制备ZnO基薄膜及离子注入研究Cathodoluminescence intensities increased on (100) facets with the increase of boron content in catalyst, and there appeared another acceptor level. High-energy peaks emerge after boron doped.
随着触媒中硼含量的增加,(100)晶面的阴极发光特征峰强度会增强,而且出现新的受主能级,高能峰在硼掺杂后才出现。
参考来源 - 含硼金刚石单晶的微观品质与半导体性能的相关性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
The molecular level flaw includes the flaw of acceptor, forwards acceptor and backward acceptor.
分子水平的缺陷包括：受体前缺陷、受体缺陷和受体后缺陷。
The level changes linearly in the acceptor defect layers.
在受主缺陷扩散层中费未能级的变化是线性的。
应用推荐