A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
If the noise level is just below the threshold needed to flip the state of the system, even a tiny input voltage is enough to change the system's state.
如果噪音的等级正好比转换系统状态的极限低，一个非常小的输入电压就足以改变系统的状态。
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