研制成功一种新型混合式面发射半导体激光器。
A new type of surface emitting semiconductor laser diodes is fabricated.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
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