非平衡载流子是指处于非平衡状态的半导体，其载流子浓度也不再是n0和p0（此处0是下标），可以比他们多出一部分。比平衡状态多出来的这部分载流子称为非平衡载流子。
... non-electric heating equipment 非电热设备 non-equilibrium carrier 非平衡载流子 non-equilibrium photocurrent 非平衡光电流 ...
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Combined with the typical circuit of RSD, the circuit equations are written, the voltage-time and the current-time waveform are gotten by means of Runge-Kutta algorithm and the non-equilibrium carrier distribution.
结合RSD工作的典型电路建立电路方程组,采用Runge-Kutta方法求解,由非平衡载流子分布得到了RSD的电压,电流波形。
参考来源 - RSD的换流物理模型研究·2,447,543篇论文数据，部分数据来源于NoteExpress
文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。
Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained.
介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
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