介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
将有限时间热力学、非平衡量子统计理论和火用经济学相结合，导出了量子斯特林制冷机的最大利润率以及对应的性能界限。
Comprising the finite time thermodynamics, nonequilibrium statistical theory and exergeocnomics, the maximum exergeoeconomic profit and performance limit are derived in the article.
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