相应的横向电势差称为霍耳电 势差（霍耳电压）， H U 实验表明： d IB R U H H H R 霍耳系数（Hall coefficient） 分析：霍耳效应的出现是运动电荷在磁场中受洛仑兹力 作用发生横向漂移的结果。
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And we obtain the global MR effects of the system consequently. We introduce three parameters which describe inhomogeneities of geometry, Hall coefficient and Ohm resistance respectively and we also consider their influence on the magnetotransport behaviors.
我们引入三个参数分别描述体系的几何非均匀性、霍耳系数非均匀性及欧姆电阻的非均匀性,考察了它们对材料的磁输运行为的影响。
参考来源 - 非磁性半导体的异常磁电阻效应研究·2,447,543篇论文数据，部分数据来源于NoteExpress
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
本文中分析了非过渡金属非晶态超导体的超导参量、声子谱参量与霍耳系数之间的经验关系。
In this work, the empirical dependances of superconducting parameters and phonon spectrum parameters on the Hall Coefficient, and the problem on the Tc in amorphous non-transition metals are studied.
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