雪崩倍增【avalanche multipication】 在强电场区内因碰撞离化而引起的自由载流子数目的增加。
Avalanche multiplication breakdown has taken place when the diode is reverse-biased to 1.4kV.
器件在反向偏置达到1.4kV时出现击穿,证明了击穿由雪崩倍增导致。
参考来源 - 4H·2,447,543篇论文数据，部分数据来源于NoteExpress
一种是基于面电荷的方法，另一种是基于求雪崩倍增因子的方法。
One is based on the charge sheet approach, the other is based on calculating a multiplication factor.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed.
应用推荐