详细研究了微带线尺寸对器件功率容量的影响，以及大功率合成系统中隔离电阻功率容量的量值；
The infection of the dimension of microstrip line to power capability of devices and the power capability of isolate resistor has been investigated in detail.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
出于ESD考虑，在输入输出采用保护电路：采用保护环隔离电阻电容，减小其对核心电路的影响。
Taking into consideration of ESD, the guard ring is adopted to isolate resistors and capacitors, thus to eliminate the influence in the main circuit by them.
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