论文介绍了IGCT器件性能参数、门极驱动电路的基本工作原理，对IGCT、GTO和IGBT的特点进行了对比。
The paper introduces the performance parameters and the fundamental principle of gate drive circuit, and compares the features of IGCT, GTO and IGBT.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
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