本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
半导体型的金属氧化物，如氧化锡(SnO2)、氧化钛(TiO2)和氧化锌(ZnO)，经常作为活性材料用在固态气体传感器件中。
Semiconducting metal oxides such as tin oxide (SnO2), titanium dioxide (TiO2) and zinc oxide (ZnO) are routinely used as active materials in solid state gas sensing devices.
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