实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性。
Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.
硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。
There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.
量子点光学微腔器件在低阈值激光器和单光子光源等量子信息处理技术领域有重要的应用前景。
Quantum dot optic microcavity device had potential application in field of quantum information technology using as the low threshold laser and single photon light source etc.
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