• ultra-thin gate oxide - 引用次数：7

  In the dissertation, the high electric field reliability problems in the ultra-short channel device with ultra-thin gate oxide of 90nm process and how these problems influence the lifetime and parameter degradation of the device has been investigated and analyzed deeply.

  本论文主要对90nm工艺中的超薄栅、超短沟道器件的强场可靠性问题进行了研究,并分析了它们导致器件性能退化和寿命缩短的机理。

  参考来源 - 90nm CMOS器件强场可靠性研究

·2,447,543篇论文数据，部分数据来源于NoteExpress