根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
提供一种包括包含高熔点金属氧化物或氧化硅的掩蔽层的具有超分辨率近场结构的高密度记录介质。
A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide is provided.
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