本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。

Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.

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实验表明，氩气放电相邻脉冲之间的瞬时电压间隔是稳定的，而氦气的却是起伏变化的。

Under the same discharge conditions, the numbers of current pulses per half cycle for helium discharge are more than that for argon discharge.

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