设计研制了一种集成光电探测器系统，它将光电二极管阵列及信号读出电路集成在同一硅芯片上。
An integrated photodetector system is designed and manufactured, in which the photodetector array and the read-out circuits are integrated on the same silicon chip.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
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