量化计算烧结颈生长率以及在不同晶界和表面迁移率比值时的烧结率，较好地符合理论分析的趋势。
The predicted growth rate of sintering neck and sintering rate for different ratios of grain boundary to surface mobility are consistent with the existing theoretical analysis.
衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。
Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.
因此，金刚石单晶体的生长看来既受到太高的碳氢超饱和度的影响，也受到少量原子态氢的影响，还受到生长物质表面迁移率减小的影响。
Thus the growth of diamond single crystals seems to be disturbed either by too high hydrocarbon supersaturation or by less atomic hydrogen or by a decreasing surface mobility of the growth species.
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