在LDMOS器件设计过程中,击穿电压(breakdown voltage,BV)一直是一项至关重要的参数.自从减小表面电场(reduced surface field,RESURF)技术[14]提出以来,通过电场调制效应来改善器件横向表面电场分布,提高器件击穿特性一直是一个备受关注的..
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并讨论了电气石颗粒表面电场。
给出表面电场强度、主结及环结分担电压的解析表达式。
The analytical expressions about surface electric field intensity and voltage undertaken by main junction and ring junction are presented.
计算分析了阴极表面电场与电子初(？)对电极形状和电子注特性的影响。
The effects of the cathode surface electric-field and electron initial velocity on the electrode shape and characteristics of electron beam are calculated and analysed.
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