本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。
The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer.
应用推荐