氧分压和沉积速率对YSZ薄膜残余应力的影响。
Influences of Oxygen Partial Pressure and Deposition Rate on Residual Stress of YSZ Thin Films.
本发明公开了一种薄膜残余应力成分的分析装置。
The invention discloses a device for analyzing compositions of residual stress of a film.
结果表明：在较低压力沉积的氮化铝薄膜有良好的择优取向性；氮化铝薄膜残余应力为压应力，且随气体压力增加而逐渐变化。
Results show that AlN films deposited at low gas pressure have good selective orientation, and compressive residual shes increased with gas pressure is found in the films.
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