且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。

Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.

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所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。

The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.

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