绝缘栅双极晶体管（Insulate-Gate Bipolar Transistor—IGBT）综合了电力晶体管（Giant Transistor—GTR）和电力场效应晶体管（Power MOSFET）的优点，具有良好的特性，应用领域很广泛；IGBT也是三端器件：栅极，集电极和发射极。
绝缘栅双极晶体管 insulated-gate bipolar transistor ; IGBT ; Insulated Gate Bipolar Transistor ; ZGBT
横向绝缘栅双极晶体管 Lateral Insulated-gate Bipolar Transistor ; LIGBT
绝缘栅双极晶体管模块 IGBT Module
沟槽绝缘栅双极晶体管 TIGBT
高压绝缘栅双极晶体管 HVIGBT
绝缘栅双极型晶体管 IGBT ; Insulated Gate Bipolar Transistor ; Trench IGBT
引言绝缘栅双极晶体管 InsulatedGateBipolarTramistor ; IGBT
绝缘栅双极性晶体管 insulated gate bipolar transistor ; IGBT
绝缘栅极双极性晶体管 Insulated Gate Bipolar Transistor
绝缘栅极双极型晶体管 Isolated Gate Bipolar Transistor
逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
简要介绍了绝缘栅双极晶体管IGBT驱动保护电路的原则。
The principle of the driven and protection circuit for IGBT is briefly introduced.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
应用推荐