... isochronous cyclotron 等时性盘旋旋转加速器 isolated gate 绝缘栅 isolated gate fet 绝缘栅场效应晶体管 ...
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... Insulator 绝缘体 Insulated Gate FET(IGFET) 绝缘栅 FET Integrated injection logic 集成注入逻辑 ...
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...容量为1 MVA、额定电压为 10 kV，开关器件选用大功率自关断电子元件绝缘栅 双极晶体管(insulated gate bipolar transistor，IGBT)。
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绝缘栅双极晶体管 insulated-gate bipolar transistor ; IGBT ; Insulated Gate Bipolar Transistor ; ZGBT
绝缘栅双极型晶体管 IGBT ; Insulated Gate Bipolar Transistor ; Trench IGBT
绝缘栅场效应晶体管 [电子] insulated gate field effect transistor ; IGFET ; [电子] isolated gate fet ; MOSFET
绝缘栅场效应管 IGFET ; MISFET ; insulated gate field-effect-transistor
绝缘栅极 insulated gate electrode ; cloistral aboideau electrode
绝缘栅型场效应管 IGFET ; JGFET ; Metal Oxide Semiconductor FET
硅绝缘栅场效应晶体管 silicon insulated gate fet
绝缘栅型场效晶体管 MOS
绝缘栅比极晶体管 IGBT
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本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
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