随着掺杂浓度的增加，体系在低温区由金属向绝缘体转变。
The system turns from metal to insulator at lower temperatures with Cu concentration increasing.
随着扫描圈数的增加，聚合膜的厚度也增加，同时电极由导体向绝缘体转变。
The modified electrode change from conductor to nonconductor with number of circle increased.
这种前驱物在920k以下为绝缘体，在920k由绝缘体转变为非晶半导体。
This amorphous B_C_N behaves as an insulator below 920k, and transforms into semiconductor above 920k.
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