与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响。

Differing from the usual model, the present model of PN diode consists of the effect of shunt conductance on the current.

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通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。

It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.

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本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。

The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.

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