等离子体增强化学气相沉积(plasma enhanced chemical vapor deposition,PECVD)
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
等离子体增强化学气相沉积(plasma enhanced chemical vapor deposition,PECVD)
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