3) There is difference between the furnace annealing and the rapid thermal annealing. 4) Phosphorus doping degenerates the crystalline ratio of deposited film but benefits recrystallization.
3)快速光退火与常规炉子退火的结果有一定的差异;4)磷掺杂导致沉积时晶化率降低,但对固相晶化有利。
参考来源 - 多晶硅薄膜制备工艺研究·2,447,543篇论文数据，部分数据来源于NoteExpress
磷掺杂导致沉积时晶化率降低，但对固相晶化有利。
Phosphorus doping degenerates the crystalline ratio of deposited film but benefits recrystallization.
根据该团队的理论研究，磷原子对锗的掺杂“在每立方厘米加入1020个原子效果最好”，Kimerling解释道。
According to the group s theoretical work, phosphorous doping works best at 1020 atoms per cubic centimeter of germanium, Kimerling explains.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
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