冷等离子体提纯与湿法冶金是制造太阳级硅材料的两种重要方法。
Cold plasma purification and hydrometallurgy, having their own merits, were two of the most important methods to prepare low cost solar grade Silicon material.
从理论上分析了利用真空蒸馏的方法除磷提纯冶金级硅的可行性，并进行了真空条件下脱磷的实验研究。
In this paper, a theoretical analysis about the feasibility of phosphorus removal in metallurgical grade silicon with vacuum distillation, then an experiment was conducted.
通过进一步工艺优化，可以继续提高提纯效果，制备整体纯度在5n以上的太阳能级多晶硅铸锭。
Through further technique optimizing, the purifying effect can be improved continually and the Mc-Si ingot with whole purity of 5n can be prepared.
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