给分离的硅参入杂质电子区域就产生电子空穴对分离从而形成电流。
An electric field created by adding impurities to the silicon splits the electron-hole pairs apart, which results in an electric current.
结果表明：电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成；
The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements, remelted and elastic distortion with a high density dislocation.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
应用推荐