... arsenic doped epi掺砷外延层 arsenic doping砷掺杂 arsenic spin on solution涂布的砷溶液 ...
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研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
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