铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
在经过破坏性读出之后，立即将数据重新写入存储器的操作。
To write data back into memory immediately after a destructive readout.
电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
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