Microsoft Word - 26-p1711.doc Key words: phase transformation; diffusion; phase field modeling; interface mobility [gap=23475]关键词：相变；扩散；相场模拟；界面迁移率
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应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。
The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
研究结果表明：在高温段2DEG 的迁移率主要受LO声子散射限制；在室温，异质界面处的非均匀压电极化场对2DEG。
The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.
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