结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
因此随之而来的问题是：由于在形成热氧化物的时候，由于硅和氧的不完全反应，在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
结果表明，炉管的氧化机理主要是金属离子穿过氧化物层的扩散并在氧化物—气体界面发生反应。
The results show that oxidizing mechanism of the heater tube is mainly diffusion of metal ion passing through oxide and its reaction at the oxide-gases boundary.
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