电迁移通常是指在电场作用下使金属离子发生迁移的现象。分别为发生在相邻导体表面的如常见的银离子迁移和发生在金属导体内部的金属化电子迁移。
...化试验 电迁移 可靠性 [gap=1198]Keywords : NiCr thin film resistor;low frequency noise;ageing test;electro migration;eliability ...
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... 电场； 相颗粒； 电迁移[gap=937]Key words: Bi-Mn alloy; magnetic field; electric field; phase particle; electrotransport...
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电迁移率 electromobility
电迁移耐力 electromigration resistance ; electromigration immunity
离子的电迁移率 mobility of ions ; electric mobility
电迁移法 [分化] electromigration
电迁移进样 electromigration injection ; electrophoretic injection
电迁移. Electro-migration
熔盐电迁移 molten salt electromigration
电迁移效应 Electromigration effect
电子迁移率 electronic mobility
Finally, the factors that affect the electromigration lifetime are analyzed.
影响铝互连的电迁移失效的各种因素中，电流密度是主导因素。
参考来源 - 集成电路可靠性评价与设计中的关键技术研究IR-drop and electro migration can also reduce the chip performance and even make the chip out of work.
另外,直流电压降和电迁移也会引起芯片性能的降低,甚至导致芯片失效。
参考来源 - 深亚微米IC物理设计中的信号完整性研究It is feasible to drive the electromigration of heavy metals in soil by a galvanic cell constructed with iron and carbon.
利用铁屑和活性碳构建的原电池产生电场来驱动土壤中重金属的电迁移是可行的。
参考来源 - 持久性有毒物质污染土壤/沉积物的电动力学修复技术和机理研究·2,447,543篇论文数据，部分数据来源于NoteExpress
电迁移是金属原子沿着电流方向的移动。
Electromigration is the movement of metal atoms in the direction of current flow.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
针对这个问题，本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。
Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.
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