特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
这一特性使它比磁存储器的速度更快，因磁存储器中的二进制数字(比特)是由磁极化区而不是由电荷表示的。
This has allowed them to be much faster than magnetic memory, in which the binary digits (" bits ") are represented by magnetically polarised regions rather than electric charges.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
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