本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应；
The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied.
电场增强方式的时间常数比非电场增强方式小，表明加电场有促进晶化的作用。
Raman spectra and x-ray diffraction spectra of annealed thin film showed that electrical field enhanced the MILC crystallization effect.
研究发现电场增强跟入射光斑大小，探针的锥形角，以及金属膜厚度密切相关。
The enhancement factor strongly depends on the illumination spot size, taper Angle of the probe, and the metal film thickness. The tolerance of the alignment Angle is investigated.
应用推荐