本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
根据夹断电压能确定可变电阻区与饱和区的分界点，使场效应管可靠地工作在饱和区的原理。
On the grounds of the pinch-off voltage, the cut-off point of variable resistance area and saturation area can be fixed, so the field effect tube can reliably work in the saturation area.
应用推荐