实验结果表明，这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。

Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.

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就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。

As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.

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这个波形可以被看作是下列原理的叠加(图22和平台5)。全部这些波形的叠加整合结果变成图21所示的典型漏极电流。

This waveform can be presented as a superposition of the following elements (Fig. 22 and Tab. 5). The superposition of all these elements results in a typical drain current shown in Fig. 21.

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