拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。

The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.

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针对电压源型空间矢量脉宽调制逆变器的死区效应，提出了一种根据电流矢量判断电流极性的死区补偿方法。

Aimed at dead time effect of voltage-fed space vector pulse width modulation (SVPWM) inverter, a novel compensation method detecting current polarities from the current vector was presented.

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漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。

The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.

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