用定值电阻代替滑线变阻器，用分压器调节电压，可使二极管反向特性的测量更加方便。
Sliding resistance was replaced by the fixed value resistance, and potentiometer was used to adjust volt, it could make measurement of diode reverse characteristic more convenient.
用N型硅单晶材料制作了点状PN结光电二极管，对二极管的光电参数进行了测量。
The point type PN junction photodiodes of silicon are fabricated, and the photoelectric parameters of photodiode are measured.
本文提出用伏安法测绘二极管伏安特性曲线的一种电路新接法，用该接法测量时，不需修正即可完全消除电表内阻的影响。
The influence of the internal resistance of the electrometer can be got rid of completely without any revision when the method is adopted.
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