浅陷阱效应 Shallow traps effect
The dominant shallow trap is thought to improve the surface flashover performance.
浅陷阱占优的陷阱结构可以改善它的闪络性能。
参考来源 - 氧化铝陶瓷的陷阱分布对其真空中沿面闪络特性的影响·2,447,543篇论文数据，部分数据来源于NoteExpress
这与老化过程中离子的迁移，浅陷阱浓度减少有关。
This may be coused by ion migration which results in decrease of shallow trap concentration.
通过浅在储陷阱的电荷泄漏模型，对MNOS结构的保留特性进行研究。
In this paper, charge retention characteristics of MNOS memory structures is investigated by a discharge model of the shallower trap.
文中还讨论了浅电子陷阱中浅束缚光电子衰减时间与阱深的依存关系。
In addition, the relationship between the depths of different shallow traps and the decay times of shallow-trapped electrons have also been discussed.
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