... impurity substancen.杂质,不纯物质 implanted impurity注入杂质 impurity diffusion杂质扩散 ...
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通过喷气和注入杂质获得的部分脱靶等离子体形成了动态气体靶。
The partially detached plasma obtained by means of combination of gas puffing and impurity injection serves as a dynamic gas target.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
对应于分子束注入脉冲，分子束的“团簇”效应引起了杂质辐射峰化时间的错位。
The shift of impurity radiation peaking relative to the injection pulse is caused by the molecular agglomeration.
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