1986年，我们共同设计制造程序自动控制真空氮化设备和研究真空脉冲氮化工艺。
In 1986 we designed the procedure auto-control vacuum nitriding furnace and studied the pulse vacuum nitriding processes.
目前LED同硅晶片的制作设备类似，都是通过在蓝宝石衬底片上沉淀氮化镓层实现。
At present these LEDs are made in machines similar to those used to make silicon chips, by depositing layers of gallium nitride on sapphire-based wafers.
该设备采用氮化钛表面掺金技术，形成离子金膜层，耐磨性非常好，广泛用于各种高档装饰膜层。
This equipment adopts the titanium nitride metal mixing techs forming ion gold membrane with good abrasion resistance, therefore it fits for various top-grade decorating membrane.
应用推荐