本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
应用元胞自动机模型对合金钢表面氮化及扩散层中氮化物沉淀过程进行了计算机模拟。
Simulations of surface nitridation and nitride precipitation in alloy steels have beeb carried out with cellular automaton modeling.
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